US4492914A - Temperature-compensating bias circuit - Google Patents

Temperature-compensating bias circuit Download PDF

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US4492914A
US4492914A US06/515,579 US51557983A US4492914A US 4492914 A US4492914 A US 4492914A US 51557983 A US51557983 A US 51557983A US 4492914 A US4492914 A US 4492914A
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circuit
voltage
resistor
diodes
bias
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Hisakazu Hitomi
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Toshiba Corp
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Tokyo Shibaura Electric Co Ltd
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Assigned to TOKYO SHIBAURA DENKI KABUSHIKI KAISHA, A CORP OF JAPAN reassignment TOKYO SHIBAURA DENKI KABUSHIKI KAISHA, A CORP OF JAPAN ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: HITOMI, HISAKAZU
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/282—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator astable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/282—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator astable
    • H03K3/2821—Emitters connected to one another by using a capacitor
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/463—Sources providing an output which depends on temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • This invention relates in general to a bias circuit for supplying a given bias voltage and, more particularly, to a temperature-compensating bias circuit which compensates for temperature drift in a transistor circuit that is biased, for instance, an emitter-coupled astable multivibrator.
  • the operating characteristics of transistor circuits are usually subject to deviations with varying ambient temperatures.
  • the oscillation frequency of an emitter-coupled astable multivibrator involves what is commonly called “temperature drift” and varies undesirably with variations in the ambient temperature.
  • temperature drift varies undesirably with variations in the ambient temperature.
  • the bias voltage generated therefrom and supplied to the transistor circuit can vary with the ambient temperature and cancel out the temperature drift of the multivibrator.
  • a bias circuit which comprises a first resistor having one end connected to a first line supplied with a power source voltage, a first circuit connected between the other end of the first register and a ground line supplied with a second voltage and including a series circuit of a second resistor and n (n ⁇ 0) diodes, and a second circuit connected in parallel with the first circuit and including a series circuit of a third resistor and m (m ⁇ 0, n+m>1) diodes.
  • a voltage appearing at the common junction of the two circuits and first resistor, is provided as the bias circuit voltage from the bias circuit.
  • the temperature coefficient of the bias voltage can be readily adjusted to a desired value in a voltage range within the power source voltage level by suitably determining the numbers n and m of diodes in the first and second circuits and then suitably selecting the resistance values of the first to third resistors.
  • FIG. 1 is a circuit diagram showing a prior art bias circuit
  • FIG. 2 is a circuit diagram illustrating a bias circuit used for an astable multivibrator in accordance with the invention
  • FIGS. 3A to 3D are diagrams illustrating signal waveforms generated at the main parts of the multivibrator connected to the bias circuit shown in FIG. 2;
  • FIG. 4 is a diagram illustrating the temperature dependency characteristics of the oscillation frequency of a multivibrator biased by the bias circuit of FIG. 2 and prior art bias circuits.
  • the prior art bias circuit illustrated in FIG. 1 effects temperature compensation by making use of the fact that the forward resistance of a diode decreases with increasing ambient temperature.
  • the bias circuit comprises a series circuit consisting of resistors 2 and 3 and n (n being a positive integer) diodes D 1 , D 2 , . . . , D n .
  • the resistor 2 which constitutes one end of the series circuit, is supplied with a power source voltage V CC .
  • the diode D n which constitutes the other end of the series circuit, is grounded.
  • An output terminal 4 is connected to the junction between the resistors 2 and 3 for obtaining the voltage across the resistor 2 as a bias voltage V bias .
  • This output terminal 4 is connected to a bias voltage input terminal of a transistor circuit (not shown) to be biased and temperature compensated.
  • the bias voltage V bias provided from the temperature-compensating bias circuit 1 is given as ##EQU1## where, R 2 : resistance of the resistor 2,
  • R 3 resistance of the resistor
  • V D forward or contact potential drop across diode D.
  • the operating characteristic of the transistor circuit that is determined by the bias voltabe V bias is temperature drift-compensated by varying the bias voltage V bias according to the temperature.
  • the temperature coefficient ⁇ is adjusted by suitably selecting the number n of diodes D and then selecting the resistance R 2 and R 3 .
  • the temperature coefficient cannot be adjusted continuously but only stepwise and only integral numbers can be selected for the number n.
  • the temperature coefficient of the bias voltage V bias cannot be exactly adjusted to any desired value but can only be adjusted to an approximate value.
  • the temperature compensation that can be obtained is imperfect, and a temperature drift is still involved to some extent in the operating characteristic of the transistor circuit connected to the bias circuit 1. In the actual use of the transistor circuit, this temperature drift must be compensated for. To this end, additional compensating means must be provided. This increases the size and cost of the circuit.
  • FIG. 2 there is shown a preferred embodient of the temperature-compensating bias circuit according to the present invention.
  • This embodiment is applied to an emitter-coupled astable multivibrator as a transistor circuit.
  • Reference numeral 10 designates the bias circuit according to the invention. It includes a first series circuit S 1 consisting of a resistor 12 and n (n being a positive integer) diodes 14-1, 14-2, . . . , 14-n and a second series circuit S 2 consisting of a resistor 16 and m (m being a positive integer and n>m) diodes 18-1, 18-2, . . . , 18-m.
  • the two series circuits S 1 and S 2 are connected in parallel.
  • the diodes 14 and 18 are connected between a power source terminal 20, to which a source voltage +V CC is applied, and the ground so as to be forward-biased by the voltage V CC .
  • the junction 22 between the resistors 12 and 16 in circuits S 1 and S 2 is connected to a bias voltage output terminal 24, and also connected to a power source line L 1 connected to the power source terminal 20 through a resistor 26.
  • a cathode common junction 28, to which the cathodes of diodes 14-n and 18-m in circuits S 1 and S 2 are commonly connected, is connected to a ground line L2.
  • the bias output terminal 24 is connected to the junction between a resistor 26 and the parallel circuit consisting of circuits S1 and S2, the resistor 26 and the parallel circuit being connected in series between the power source line L 1 and ground line L 2 .
  • the bias voltage V bias that is obtained from the temperature-compensating bias circuit 10 is given as
  • V 24 potential at the junction (i.e., potential at the terminal 24). Also, from a relation ##EQU3## where, R 26 : resistance of the resistor 26,
  • R 12 resistance of the resistor 12
  • R 16 resistance of the resistor 16
  • V D contact potential drop (or barrier potential drop) across the diode 14 and 18,
  • the bias voltage V bias can be expressed as ##EQU4##
  • the rate of change ⁇ V bias / ⁇ T A of the bias voltage V bias with respect to the ambient temperature T A is thus ##EQU5##
  • the temperature coefficient ⁇ of the bias voltage V bias of the bias circuit 10 is given as ##EQU6##
  • the transistor circuit that is connected to the bias circuit 10 is an emitter-coupled astable multi-vibrator 30, such as for an FM modulator of a video tape recorder (VTR) or video cassette recorder (VCR), for example.
  • VTR video tape recorder
  • VCR video cassette recorder
  • npn switching transistors 32 and 34 have their collectors connected to the power source line L 1 through respective npn transistors 36 and 38.
  • the collector of switching transistor 32 is also connected to the emitter of an npn transistor 42 through a resistor 40.
  • the base and collector of transistor 42 are connected to the power source line L 1 .
  • the collector of the other switching transistor 34 is connected to the emitter of transistor 42 through a resistor 44.
  • the collector of transistor 32 is connected to the base of transistor 34 through the base-emitter path of an npn transistor 46, and is also connected to the base of an npn transistor 48.
  • the transistors 46 and 48 are connected to the power source line L 1 at their collectors.
  • the collector of transistor 34 is connected to the base of transistor 32 through a base-emitter path of an npn transistor 50 whose collector is connected to the power source line L 1 and also to the base of an npn transistor 52 whose collector is connected to the line L 1 .
  • the transistors 46 and 50 are grounded at their emitters through resistors 54 and 56, respectively.
  • the bases of transistors 36 and 38 are commonly connected to the aforementioned bias voltage output terminal 24 of the bias circuit 10 according to the present invention. In other words, bias voltage V bias generated by the circuit 10 is directly supplied to the bases of transistors 36 and 38.
  • the emitters of transistors 32 and 34 are each connected to the collectors of npn transistors 58 and 60, which have their emitters connected to each other and also connected to the ground level L 2 through a current source 62.
  • a capacitor 63 is provided between the emitters of transistors 32 and 34.
  • the emitter of transistor 48 is connected to the base of transistor 58 through a resistor 64, and is also connected to the ground line L 2 through resistors 64 and 66.
  • the emitter of the transistor 52 is connected to the base of transistor 60 through a resistor 68 and also connected to the ground through resistors 68 and 70.
  • FIGS. 3A and 3B are waveform diagrams showing the potentials (V C32 and V C34 ) at the collectors of switching transistors 32 and 34
  • FIGS. 3C and 3D are waveform diagrams showing the potentials (V E32 and V E34 ) at the emitters of transistors 32 and 34.
  • the pair of switching transistors 32 and 34 are alternately and repeatedly rendered conductive, whereby the oscillating operation of the multivibrator 30 is obtained.
  • one transistor 32 first switching transistor
  • the other transistor 34 second switching transistor
  • the transistor 36 connected to the first switching transistor 32 is also rendered conductive, so that the collector potential V C32 on the first switching transistor 32 becomes lower than the potential V 24 at the output terminal 24 of the bias circuit 10 by the base-emitter voltage drop V BE36 across the transistor 36.
  • the potential V 24 at the output terminal 24 is equal to the difference between the source voltage V CC and the bias voltage V bias of the bias circuit 10.
  • the collector voltage V C32 at the instant t 1 is thus
  • V BE42 base-emitter voltage across the transistor 42.
  • V BE42 base-emitter voltage across the transistor 42
  • V BE50 base-emitter voltage across the transistor 50
  • V BE32 base-emitter voltage across the transistor 32.
  • a constant current I 0 shown by the solid line in FIG. 2 flows through the transistor 60, which is rendered conductive in response to the ON operation of the transistor 32.
  • the capacitor 63 is charged by the constant current I 0 flowing in the illustrated direction.
  • the emitter voltage V E34 on the second switching transistor 34 decreases at a constant rate after instant t 1 as shown by reference numeral 72 in FIG. 3D.
  • the base-emitter voltage V BE34 of the second switching transistor 34 eventually assumes a predetermined value at an instant t 2 , whereupon the transistor 34 is inverted from the conductive to nonconductive state. If the emitter voltage on the transistor 34 at the time of the inversion is indicated by V BE (ON), the emitter voltage V E34 on the transistor 34 at this instant t 2 is given as
  • V B34 base potential on the transistor 34.
  • the second switching transistor 34 When the second switching transistor 34 is inverted from the nonconductive to conductive state at instant t 2 , the first switching transistor 32 is rendered nonconductive. At this instant t 2 the collector potentials V C32 and V C34 on the transistors 32 and 34 are ##EQU8## The emitter potential V E34 on the transistor 34 at this time is, like the emitter potential V E32 on the transistor 32 at the previous instant t 1 ,
  • V BE34 base-emitter voltage of the conductive transistor 34
  • the resistance R 12 of the resistor 12 is selected such that an equal current flows in the collectors of transistors 36 and 24 when the transistor 36 is conductive.
  • the equation 16 thus can be written as
  • the first switching transistor 32 is nonconductive while the second switching transistor 34 is conductive.
  • the constant current I 0 flows in the direction as shown by the dashed line in FIG. 2.
  • the emitter potential V E32 on the first transistor decreases at a constant rate as indicated by reference numeral 74 in FIG. 3C.
  • the decreasing potential V E32 becomes
  • V BE32 (ON) base-emitter voltage of the transistor 32 necessary for the inversion from the nonconductive to conductive state.
  • the switching transistors 32 and 34 of the multivibrator 30 are then repeatedly and alternately switched, so that their collector potentials V C32 and V C34 have pulse waveforms corresponding to the oscillation output of the multivibrator 30, having a constant cycle (2T) as shown in FIGS. 3A and 3B.
  • V BE32 V BE34
  • V BE34 V BE34
  • V cpt represents terminal voltage across the capacitor 64 when the switching transistors 32 and 34 are alternately on-off switched, that is,
  • the bias output voltage V bias of the bias circuit 10 is a parameter having direct influence on the oscillation frequency f 0 of the multivibrator 30.
  • the oscillation frequency f 0 can be adjusted by varying the constant current I 0 , as is evident from equation 24'.
  • the multivibrator 30 can thus be used as an FM modulator for a video tape recorder (VTR) if it is arranged such that an image signal is supplied to it as the input signal and the constant current I 0 is changed in response to this input signal and has the same phase.
  • the oscillation frequency f 0 of the multivibrator 30 thus arranged includes temperature drift. This is so because the terminal voltage V cpt across the capacitor 63 includes temperature drift as noted previously.
  • the temperature drift of the capacitor terminal voltage V cpt stems from the following fact.
  • the collector currents in the two switching transistors 32 and 34 are actually not equal. This gives rise to a difference between the temperature coefficients of the base-emitter voltages V BE32 and V BE34 of these transistors 32 and 34.
  • the collector current I C34 (ON) in the second switching transistor 34 at the instant t 2 consider now the collector current I C34 (ON) in the second switching transistor 34 at the instant t 2 .
  • the emitter potential V E34 on the transistor 34 is reduced by ⁇ V while the transistor 34 is nonconductive before instant t 2 , it increases the current through the resistor 44 by an amount ⁇ V ⁇ gm 34 where gm 34 is the mutual conductance of the transistor 34. This current increase reduces the collector potential V C34 on the transistor 34 by V ⁇ gm 34 ⁇ R 44 . This change in the collector potential V C34 is directly fed back to the emitter of the transistor 34 through the transistor 50, base-emitter junction of the transistor 32 and capacitor 64. In order for the transistor 32 to be inverted from the nonconductive to conductive state at this time, the loop gain G given as ##EQU15## must be no less than unity.
  • T A absolute temperature
  • the base-emitter voltage V BE34 (ON) of the transistor 34 at the time of inversion thereof is thus given as ##EQU18## where, I s : saturation current in the transistors 32 and 34.
  • the collector current I C32 in the transistor 32 is equal to I 0 , the base-emitter voltage V BE32 on the transistor 32 at the time of the inversion thereof is ##EQU19## From equations 29, 30 and 25, the terminal voltage V cpt across the capacitor 63 at the time of the inversion is given as ##EQU20## It will be understood that the capacitor terminal voltage V cpt is a function of the absolute temperature T A and includes a negative temperature drift. The oscillation frequency f 0 given by the equation 24 thus includes a positive temperature drift.
  • the temperature drift of the multivibrator 30 itself can be cancelled by the temperature dependency of the bias voltage V bias of the bias circuit 10 according to the invention, which includes a similar temperature drift. It is thus possible to obtain efficient temperature compensation in the multivibrator 30.
  • the change rate ⁇ V cpt / ⁇ T A of the capacitor voltage V cpt shown by the equation 31 with respect to the absolute temperature T A is ##EQU21##
  • the temperature drift can be eliminated if ⁇ V cpt / ⁇ T A in equation 32 can be reduced to zero.
  • the value ⁇ V cpt / ⁇ T A can be readily reduced to zero, as is verified in the following.
  • the graph of FIG. 4 shows the temperature dependency of the oscillation frequency f 0 of the multivibrator 30.
  • the characteristics in the graph were obtained by setting ##EQU23## in the circuit of FIG. 2 including the multivibrator 30.
  • Curve 80 in FIG. 4 represents the temperature dependency of the oscillation frequency f 0 of the multivibrator 30 in the prior art bias circuit 1 of FIG. 1 with zero diodes D. In this case, the oscillation frequency f 0 is changed by 175 kHz with an ambient temperature change from 0° C. to 100° C.
  • Curves 82 and 84 represent temperature dependency characteristics in a case where the prior art bias circuit 1 has one diode and two diodes, respectively.
  • the characteristics of the curves 82 and 84 are better than the characteristic of curve 80. However, the oscillation frequency changes of 68 and 83 kHz, respectively, are still considerable. The characteristics of curves 82 and 84 cancelling each other out; the oscillation frequency f 0 is increasing in the former and decreasing in the latter along with the increasing temperature. It is seen that in order to obtain effective temperature compensation of the multivibrator 30 used with the prior art circuit 1 of FIG. 1, the number of diodes D is somewhere between 1 and 2. The number of diodes D, however, can only be an integral number, so that it is impossible to obtain better temperature compensation so long as the prior circuit arrangement is used.

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US06/515,579 1982-07-29 1983-07-20 Temperature-compensating bias circuit Expired - Fee Related US4492914A (en)

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JP57131242A JPS5922433A (ja) 1982-07-29 1982-07-29 温度補償用回路

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Cited By (9)

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Publication number Priority date Publication date Assignee Title
US4524318A (en) * 1984-05-25 1985-06-18 Burr-Brown Corporation Band gap voltage reference circuit
DE3632458A1 (de) * 1985-09-25 1987-04-02 Toshiba Kawasaki Kk Stromgesteuerter oszillator
US4783620A (en) * 1986-07-11 1988-11-08 Kabushiki Kaisha Toshiba Constant voltage circuit having an operation-stop function
US4812784A (en) * 1987-11-19 1989-03-14 International Business Machines Corporation Temperature stable voltage controlled oscillator with super linear wide frequency range
US4896338A (en) * 1987-06-26 1990-01-23 Thomson-Csf Method and device for the digital synthesis of a clock signal
US4977381A (en) * 1989-06-05 1990-12-11 Motorola, Inc. Differential relaxation oscillator
US5604466A (en) * 1992-12-08 1997-02-18 International Business Machines Corporation On-chip voltage controlled oscillator
DE19621749A1 (de) * 1996-05-30 1997-12-04 Siemens Ag Schaltungsanordnung zum Erzeugen eines Widerstandsverhaltens mit einstellbarem positiven Temperaturkoeffizienten sowie Verwendung dieser Schaltungsanordnung
US6008632A (en) * 1997-10-15 1999-12-28 Oki Electric Industry Co., Ltd. Constant-current power supply circuit and digital/analog converter using the same

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JPS6118898A (ja) * 1984-07-06 1986-01-27 株式会社日立製作所 放射性廃棄物固化体及びその製造方法
KR920004587B1 (ko) * 1989-10-24 1992-06-11 삼성전자 주식회사 메모리장치의 기준전압 안정화회로
US5220273A (en) * 1992-01-02 1993-06-15 Etron Technology, Inc. Reference voltage circuit with positive temperature compensation

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US2769137A (en) * 1953-11-13 1956-10-30 Melville C Creusere Single bias voltage curve shaping network
GB941705A (en) * 1958-09-02 1963-11-13 Philips Electrical Ind Ltd Improvements in or relating to switching arrangements
GB988800A (en) * 1961-09-29 1965-04-14 Siemens Ag Improvements in or relating to electrically tunable resonant circuit arrangements
US3281656A (en) * 1963-07-02 1966-10-25 Nuclear Corp Of America Semiconductor breakdown diode temperature compensation
US3758791A (en) * 1969-06-06 1973-09-11 Hitachi Ltd Current switch circuit
US3934476A (en) * 1969-09-11 1976-01-27 Lamb Ii Harry H Linear telethermometer

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DE2314423C3 (de) * 1973-03-23 1981-08-27 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zur Herstellung einer Referenzgleichspannungsquelle
JPS532549B2 (en]) * 1973-11-07 1978-01-28
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US2769137A (en) * 1953-11-13 1956-10-30 Melville C Creusere Single bias voltage curve shaping network
GB941705A (en) * 1958-09-02 1963-11-13 Philips Electrical Ind Ltd Improvements in or relating to switching arrangements
GB988800A (en) * 1961-09-29 1965-04-14 Siemens Ag Improvements in or relating to electrically tunable resonant circuit arrangements
US3281656A (en) * 1963-07-02 1966-10-25 Nuclear Corp Of America Semiconductor breakdown diode temperature compensation
US3758791A (en) * 1969-06-06 1973-09-11 Hitachi Ltd Current switch circuit
US3934476A (en) * 1969-09-11 1976-01-27 Lamb Ii Harry H Linear telethermometer

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4524318A (en) * 1984-05-25 1985-06-18 Burr-Brown Corporation Band gap voltage reference circuit
DE3632458A1 (de) * 1985-09-25 1987-04-02 Toshiba Kawasaki Kk Stromgesteuerter oszillator
US4717892A (en) * 1985-09-25 1988-01-05 Kabushiki Kaisha Toshiba Current-controlled multivibrator with temperature compensation
DE3632458C2 (en]) * 1985-09-25 1988-09-29 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa, Jp
US4783620A (en) * 1986-07-11 1988-11-08 Kabushiki Kaisha Toshiba Constant voltage circuit having an operation-stop function
US4896338A (en) * 1987-06-26 1990-01-23 Thomson-Csf Method and device for the digital synthesis of a clock signal
US4812784A (en) * 1987-11-19 1989-03-14 International Business Machines Corporation Temperature stable voltage controlled oscillator with super linear wide frequency range
US4977381A (en) * 1989-06-05 1990-12-11 Motorola, Inc. Differential relaxation oscillator
US5604466A (en) * 1992-12-08 1997-02-18 International Business Machines Corporation On-chip voltage controlled oscillator
DE19621749A1 (de) * 1996-05-30 1997-12-04 Siemens Ag Schaltungsanordnung zum Erzeugen eines Widerstandsverhaltens mit einstellbarem positiven Temperaturkoeffizienten sowie Verwendung dieser Schaltungsanordnung
DE19621749C2 (de) * 1996-05-30 1998-07-16 Siemens Ag Schaltungsanordnung zum Erzeugen eines Widerstandsverhaltens mit einstellbarem positiven Temperaturkoeffizienten sowie Verwendung dieser Schaltungsanordnung
US6121763A (en) * 1996-05-30 2000-09-19 Siemens Aktiengesellschaft Circuit arrangement for generating a resistance behavior with an adjustable positive temperature coefficient as well as application of this circuit arrangement
US6008632A (en) * 1997-10-15 1999-12-28 Oki Electric Industry Co., Ltd. Constant-current power supply circuit and digital/analog converter using the same

Also Published As

Publication number Publication date
DE3327249C2 (de) 1986-01-16
JPH0324815B2 (en]) 1991-04-04
GB2124444B (en) 1986-03-12
GB2124444A (en) 1984-02-15
GB8319774D0 (en) 1983-08-24
KR840005624A (ko) 1984-11-14
DE3327249A1 (de) 1984-02-09
JPS5922433A (ja) 1984-02-04

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